Researchers at the Shanghai Institute of Applied Physics of the Chinese Academy of Sciences have recently proposed a new mechanism for generating high-brightness, fully coherent radiation based on storage ring light sources. Studies have shown that this operating mechanism can make full use of the characteristics of the storage ring electron beam, and can achieve the generation of femtosecond-level high peak brightness X-ray pulses through a simpler device modification, thereby greatly enhancing the performance of the storage ring light source.
This subject is aimed at the special requirements of 400Gb / s high-speed coherent optical communication systems for narrow linewidth lasers. It has carried out research on the preparation of semiconductor gain material laser pointer gain chips, fiber grating design and semiconductor laser structure packaging. The FBG external-cavity narrow-linewidth semiconductor laser with a dual-stage gain chip realizes a compact, low-power, low-cost, and highly stable narrow-linewidth laser output.
The third-generation synchrotron light source based on the storage ring has become a major scientific platform supporting basic and applied research in the disciplines of physics, chemistry, materials, medicine, and life sciences. The third-generation synchrotron light source has many advantages such as high average brightness, stable pulse energy, and simultaneous support for multi-user operation. However, due to the limitation of principle, it also has the disadvantages of lower peak brightness, longer pulse length and no coherence in the longitudinal direction. In order to overcome these shortcomings of the storage ring light source, people are developing X-ray free electron lasers. At the same time, with the development of diffraction-limited storage ring light sources in recent years, people began to explore the feasibility of generating fully coherent free electron lasers based on storage rings, and proposed some new solutions.
Silicon-based nano red laser pointer and optical amplifier. Research on semiconductor luminescence physics, nanophotonics, and extreme miniaturization of device fabrication and characterization Is a pioneer in the field of nano laser technology. Professor Ning Cunzheng’s research group has been devoted to the physical and applied research of micro-nano optoelectronic material devices, constantly breaking through the miniaturization limits of lasers and optical amplifiers, and conducting cutting-edge exploration for optoelectronic integration and its application in future computer chips.
For more than a decade, the research group has focused on the development of new materials for nano lasers and optical amplifiers with high optical gain. Recently, major breakthroughs have been made in these two areas. A major breakthrough has been made in the research of silicon-based nano lasers and optical amplifiers. Another great significance of the above two studies lies in silicon-based optoelectronic integration and future computer chips. As we all know, silicon materials are the basis of current microelectronic technology, including computer chips, and are also highly likely substrate materials for future optoelectronic integration.
However, since silicon is a very low-efficiency luminescent material, future optoelectronic integrated chips need to integrate other luminescent materials with the silicon substrate in some way. This kind of integration is also an unsolved problem in optoelectronic integration in recent decades. It is common practice to bond III-V compound semiconductors with high luminous efficiency to silicon. In contrast, two-dimensional materials or nanowire structures will not cause any damage or performance degradation due to stress or lattice mismatch, providing a new idea for future silicon-based optoelectronic integration.