Ultrafast lasers for chemical and physical processing of graphene

Ultrafast lasers (picoseconds and femtoseconds) are widely used in thin film patterning in the development and manufacturing of micro-nanoelectronic devices including photovoltaics, displays, sensors, or large organic electronic devices. The main advantage of the ultrafast laser pointer is its limited thermal effect and fast energy dissipation, so as to realize the patterning of complex multi-layer ultra-thin films.

The coming era of nanomaterials will also bring ultra-fast, efficient and miniaturized equipment. However, processing these new nanomaterials with precision to a single atomic layer poses great technical difficulties. The following describes the atomic-level application of ultrafast laser patterning for two-dimensional carbon lattices, namely graphene.

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Graphene and laser irradiation, graphene has caused a huge sensation in the past decade. Due to its unique properties, it is widely used in various applications, including photonics, optoelectronics, sensors, chemical reactions, and energy storage. Different processing techniques have been developed for graphene technology, but they are mainly silicon-based conventional processing methods for microelectronics.

Laser processing has just begun to be used in the development of graphene equipment, but has shown its huge potential. Laser beams can be used to process different types of graphene, including laser-assisted graphene growth (LIG, silicon carbide and polyimide), ablation of different substrate patterns, and even chemical modification (oxidation and functionalization; as shown below). These processes can be used for the direct integration of different optoelectronics, photonics, and nanoelectromechanical systems (NEMS) devices.

Ultrafast green laser pointer are used for the chemical and physical processing of graphene. Ultrafast lasers can replace multi-step lithography with a single-step direct laser writing; in this way, any impurities formed on the surface through a wet process can be avoided. When there is only one or a few atomic monolayers in the thickness, the light absorption of graphene in a wider electromagnetic spectrum window is relatively high.